Paired dynamic parallel plate capacitively coupled plasmas

US11923172B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Hari Ponnekanti · San Jose, US
• Tsutomu Tanaka · Nishinomiya, JP
• Mandyam Sriram · Beaverton, US
• Dmitry A. Dzilno · Sunnyvale, US
• Sanjeev Baluja · Campbell, US
• Mario David Silvetti · Fountain Hills, US

Key dates

• Filing date: Feb 8, 2022
• Grant date: Mar 5, 2024
• Expiry date: Jul 1, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between a first support surface and a second support surface.