Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer
US11923418B2 · kind B2 · utility
7Cited by
115References
24Claims
0Family size
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Key dates
| Filing date | Apr 21, 2021 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Sep 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device may include a first single crystal silicon layer having a first percentage of silicon 28; a second single crystal silicon layer having a second percentage of silicon 28 higher than the first percentage of silicon 28; and a superlattice between the first and second single crystal silicon layers. The superlattice may include stacked groups of layers, with each group of layers including stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.