Group III nitride-based transistor device having a field plate

US11929405B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Helmut Brech · Lappersdorf, DE
• John Twynam · Regensburg, DE

Key dates

• Filing date: Apr 13, 2021
• Grant date: Mar 12, 2024
• Expiry date: Mar 2, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In an embodiment, a Group III nitride-based transistor device includes a source electrode, a drain electrode and a gate electrode positioned on a first major surface of a Group III nitride based-based layer, wherein the gate electrode is laterally arranged between the source electrode and the drain electrode, a passivation layer arranged on the first major surface and a field plate coupled to the source electrode, the field plate having a lower surface arranged on the passivation layer. The field plate is laterally arranged between and laterally spaced apart from the gate electrode and the drain electrode.