Method for particle removal from wafers through plasma modification in pulsed PVD
US11932934B2 · kind B2 · utility
0Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2022 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Sep 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.