Method of making a quantum device
US11941485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Feb 22, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N10/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for producing a quantum device comprising providing a substrate having a front face and carrying at least one transistor pattern on the front face thereof, said transistor pattern comprising, in a stack a gate dielectric on the front face of the substrate, and a gate on the gate dielectric, said gate having a top and sidewalls. The method further includes forming a protective layer at the front face of the substrate, said protective layer being configured to prevent diffusion of at least one metal species in the substrate, forming a metal layer that has, as a main component, at least one metal species, at least on the sidewalls of the gate, said at least one metal species comprising at least one superconducting element, and forming a superconducting region in the gate by lateral diffusion of the at least one superconducting element from the sidewalls of said gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.