Patent · US Active

Memory cell group read with compensation for different programming speeds

US11955184B2 · kind B2 · utility

1Cited by
8References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 10, 2022
Grant dateApr 9, 2024
Priority date
Expiry dateAug 16, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/3459
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Technology is disclosed herein for a memory system that compensates for different programming speeds in two sets of memory cells when reading those two sets of memory cells. The memory system programs a group of the memory cells to one or more data states. In one aspect, the memory cells are not verified during programming. The group has a first set of memory cells that program at a first speed and a second set of memory cells that program at a second speed. The memory system reads the first set of the memory cells with a first set of read parameters and reads the second set of the memory cells with a second set of read parameters. The first set of read parameters are different from the second set of read parameters to compensate for the different programming speeds.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.