Power-tap pass-through to connect a buried power rail to front-side power distribution network
US11961802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2021 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Jun 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a device plane including an array of cells each including a transistor device. The device plane is formed on a working surface of a substrate and has a front side and a backside opposite the front side. A signal wiring structure is formed on the front side of the device plane. A front-side power distribution network (FSPDN) is positioned on the front side of the device plane. A buried power rail (BPR) is disposed below the device plane on the backside of the device plane. A power tap structure is formed in the device plane. The power tap structure electrically connects the BPR to the FSPDN and electrically connects the BPR to at least one of the transistor devices to provide power to the at least one of the transistor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.