Resistive switching memory having confined filament formation and methods thereof
US11997932B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 31, 2021 |
| Grant date | May 28, 2024 |
| Priority date | — |
| Expiry date | Oct 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Resistive switching memory cells having filament-based switching mechanisms are provided. By way of example, resistive switching memory cells having resistive filaments constrained to a core of the cell are disclosed. In other examples, methods for fabricating resistive switching memory cells to constrain a conductive filament formed in the resistive switching memory cell to a central portion of core of the cell are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.