Patent · US Active

Thin film, in-situ measurement through transparent crystal and transparent substrate within processing chamber wall

US12009191B2 · kind B2 · utility

0Cited by
19References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 12, 2020
Grant dateJun 11, 2024
Priority date
Expiry dateAug 30, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/332
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A system includes a transparent crystal, at least part of which is embedded within a wall and a liner of a processing chamber. The transparent crystal has a proximal end and a distal end, the distal end having a distal surface exposed to an interior of the processing chamber. A transparent thin film is deposited on the distal surface and has chemical properties substantially matching those of the liner. A light coupling device is to: transmit light, from a light source, through the proximal end of the transparent crystal, and focus, into a spectrometer, light received reflected back from a combination of the distal surface, a surface of the transparent thin film, and a surface of a process film layer deposited on the transparent thin film. The spectrometer is to detect a first spectrum within the focused light that is representative of the process film layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.