Reactor system and method to reduce residue buildup during a film deposition process
US12043899B2 · kind B2 · utility
0Cited by
2,216References
18Claims
0Family size
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Key dates
| Filing date | Jun 15, 2022 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Jun 15, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4586
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.