Patent · US Active

Semiconductor device protection using an anti-reflective layer

US12046509B2 · kind B2 · utility

0Cited by

2References

24Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stephan Voss · Munich, DE
Alexander Breymesser · Villach, AT
Eva-Maria Hof · Villach, AT
Mathias Plappert · Finkenstein, AT
Carsten Schaeffer · Annenheim, AT

Key dates

Filing date	Dec 21, 2020
Grant date	Jul 23, 2024
Priority date	—
Expiry date	Nov 18, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/564
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a metallic layer may be formed over a semiconductor substrate. An anti-reflective layer may be formed over the metallic layer. A passivation layer may be formed over the anti-reflective layer. An opening may be formed in the passivation layer to expose the anti-reflective layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.