Tin oxide thin film spacers in semiconductor device manufacturing
US12051589B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2021 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Oct 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3342
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, formation of spacers involves deposition of a tin oxide layer on a semiconductor substrate having multiple protruding features. The deposition is performed in a deposition apparatus having a controller with program instructions configured to cause sequential contacting of the semiconductor substrate with a tin-containing precursor and an oxygen-containing precursor such as to coat the semiconductor substrate having the protruding features with a tin oxide layer. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.