Integrated high efficiency transistor cooling
US12051638B2 · kind B2 · utility
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1References
5Claims
0Family size
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Key dates
| Filing date | Jun 10, 2021 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Jul 27, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microfabrication device is provided. The microfabrication device includes a transistor plane formed on a substrate, the transistor plane including a plurality of field effect transistors; fluidic passages formed within the transistor plane; a dielectric fluid added to the fluidic passages; and a circulating mechanism configured to circulate the dielectric fluid through the transistor plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.