Methods for silicon germanium uniformity control using multiple precursors
US12057314B2 · kind B2 · utility
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Key dates
| Filing date | May 12, 2021 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | May 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02579
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.