Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement

US12062538B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Jengyi Yu · San Ramon, US
• Samantha Tan · Newark, US
• Liu-Yang Yang · Nanhu, CN
• Chen-Wei Liang · El Cerrito, US
• Boris Volosskiy · San Jose, US
• Richard Wise · Los Gatos, US
• Yang Pan · Singapore, SG
• Da Li · Newark, US
• Ge Yuan · Fremont, US
• Andrew Xiao Liang · San Francisco, US

Key dates

• Filing date: Apr 14, 2020
• Grant date: Aug 13, 2024
• Expiry date: Dec 26, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32105
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided herein are methods and systems for reducing roughness of an EUV resist and improving etched features. The methods involve descumming an EUV resist, filling divots of the EUV resist, and protecting EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to an underlying layer, which improves the quality of etched features. Following etching of the underlying layer, the cap may be removed.