Patent · US Active

Magnetic memory devices and methods of formation

US12075628B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Lin Xue · San Diego, US
Chando Park · San Diego, US
Jaesoo Ahn · San Jose, US
Hsin-wei Tseng · San Jose, US
Mahendra Pakala · San Jose, US

Key dates

Filing date	Jan 16, 2020
Grant date	Aug 27, 2024
Priority date	—
Expiry date	Jan 21, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/01
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Implementations of the present disclosure generally relate to a memory device. More specifically, implementations described herein generally relate to a SOT-MRAM. The SOT-MRAM includes a memory cell having a magnetic storage layer disposed side by side and in contact with a SOT layer. The side by side magnetic storage layer and the SOT layer can achieve the switching of the magnetic storage layer by reversing the direction of the electrical current flowing through the SOT layer without any additional conditions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.