Patent · US Active

Group III nitride device and method of fabricating a Group III nitride-based device

US12087830B2 · kind B2 · utility

0Cited by

1References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
John Twynam · Regensburg, DE

Key dates

Filing date	Apr 22, 2021
Grant date	Sep 10, 2024
Priority date	—
Expiry date	Jul 22, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an embodiment, a Group III nitride-based transistor device includes a first passivation layer arranged on a first major surface of a Group III nitride-based layer, a second passivation layer arranged on the first passivation layer, a source ohmic contact, a drain ohmic contact and a gate positioned on the first major surface of a Group III nitride-based layer, and a field plate, the field plate being laterally arranged between and spaced apart from the gate and the drain ohmic contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.