Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

US12091749B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Tetsuya Ishikawa · Fuji, JP
• Swaminathan Srinivasan · Pleasanton, US
• Matthias Bauer · Phoenix, US
• Manjunath Subbanna · Kanchinakote, IN
• Ala Moradian · Sunnyvale, US
• Kartik Shah · Saratoga, US
• Errol Antonio C. Sanchez · Tracy, US
• Michael R. Rice · Pleasanton, US
• Peter Reimer · Ellwangen, DE
• Marc Shull · Los Gatos, US

Key dates

• Filing date: May 11, 2021
• Grant date: Sep 17, 2024
• Expiry date: May 11, 2041

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/165
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.