Method for manufacturing a substrate for a front-facing image sensor
US12100727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Sep 24, 2024 |
| Priority date | — |
| Expiry date | Apr 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.