Substrate thinning for a backside power distribution network
US12106969B2 · kind B2 · utility
0Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2021 |
| Grant date | Oct 1, 2024 |
| Priority date | — |
| Expiry date | Sep 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a first recess partially through a substrate from a first side of the substrate, forming a dielectric layer in the first recess, forming a second recess partially through the dielectric layer from the first side of the substrate, and forming a buried power rail (BPR) in the second recess of the dielectric layer. The method also includes thinning the substrate from a second side of the substrate to a level of the dielectric layer, the second side of the substrate being opposite to the first side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.