Patent · US Active

Rotating biasable pedestal and electrostatic chuck in semiconductor process chamber

US12112972B2 · kind B2 · utility

0Cited by
7References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 2, 2021
Grant dateOct 8, 2024
Priority date
Expiry dateMar 22, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32706
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.