Plasma-enhanced chemical vapor deposition of carbon hard-mask

US12136549B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Byung Seok KWON · San Jose, US
• Prashant Kumar Kulshreshtha · San Jose, US
• Kwangduk Douglas Lee · Redwood City, US
• Bushra Afzal · Saratoga, US
• Sungwon Ha · Palo Alto, US
• Vinay Prabhakar · Cupertino, US
• Viren Kalsekar · Sunnyvale, US
• Satya THOKACHICHU · San Jose, US
• Edward P. Hammond, IV · Hillsborough, US

Key dates

• Filing date: Mar 21, 2019
• Grant date: Nov 5, 2024
• Expiry date: Apr 3, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.