Low resistivity tungsten film and method of manufacture
US12191198B2 · kind B2 · utility
0Cited by
8References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 25, 2020 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Aug 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.