Methods for minimizing feature-to-feature gap fill height variations
US12191200B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Jun 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds to approximately 60 seconds with the tungsten halide gas, and performing a metal preclean process and a gap fill deposition on a plurality of features on the substrate after soaking of the substrate has completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.