Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber
US12196617B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2020 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Aug 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.