Patent · US Active

Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer

US12211703B2 · kind B2 · utility

0Cited by

6References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Alexander Breymesser · Villach, AT
Bernhard Goller · Villach, AT
Matthias Kuenle · Villach, AT
Helmut Oefner · Zorneding, DE
Francisco Javier Santos Rodriguez · Villach, AT
Stephan Voss · Munich, DE

Key dates

Filing date	Aug 22, 2023
Grant date	Jan 28, 2025
Priority date	—
Expiry date	Aug 22, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/7806
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate; increasing the porosity of the first semiconductor layer; first annealing the first semiconductor layer in an atmosphere including an inert gas; forming a second semiconductor layer on the first semiconductor layer; and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer. Additional methods of forming a semiconductor device are described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.