Patent · US Active

Plasma processing methods using multiphase multifrequency bias pulses

US12217935B2 · kind B2 · utility

0Cited by

6References

20Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Ya-Ming Chen · Austin, US
Shyam Sridhar · Albany, US
Peter Ventzek · Austin, US
Alok Ranjan · Austin, US

Key dates

Filing date	Jun 15, 2022
Grant date	Feb 4, 2025
Priority date	—
Expiry date	Sep 2, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/334
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A plasma processing method includes generating a plasma within a processing chamber using source power to ignite a glow phase of the plasma, generating low-energy ions at a substrate supported by a substrate holder in the processing chamber from the plasma using lower-frequency radio frequency bias power applied during the glow phase, and generating high-energy ions at the substrate using higher-frequency radio frequency bias power applied during an afterglow phase of the plasma. The frequency of the higher-frequency radio frequency bias power is greater than the frequency of the lower-frequency radio frequency bias power.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.