Methods for depositing tungsten or molybdenum films
US12252787B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Aug 1, 2023 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Aug 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.