Integrated cleaning process for substrate etching
US12255055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2022 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Nov 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.