Methods for forming metal gapfill with low resistivity
US12272659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Oct 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/35121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.