Selective laser annealing method

US12278275B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Rudolf Berger · Munich, DE
• Helmut Brech · Lappersdorf, DE
• Olaf Storbeck · Dresden, DE
• Haifeng Sun · Beijing, CN
• John Twynam · Regensburg, DE

Key dates

• Filing date: Jan 5, 2023
• Grant date: Apr 15, 2025
• Expiry date: Feb 5, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/343
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method includes providing a semiconductor body, forming a thermosensitive element on or within the semiconductor body, forming a structured laser-reflective mask on the upper surface of the semiconductor body that covers the thermosensitive element and includes first and second openings, and performing a laser thermal annealing process that transmits laser energy through the first and second openings and into the semiconductor body, wherein the thermosensitive element comprises a critical temperature at which the thermosensitive element is irreparably damaged, wherein the laser thermal annealing process brings portions of the semiconductor body that are underneath the first and second openings to above the critical temperature, and wherein during the laser thermal annealing process the thermosensitive element remains below the critical temperature.