Methods and apparatus for carbon compound film deposition
US12288672B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2020 |
| Grant date | Apr 29, 2025 |
| Priority date | — |
| Expiry date | Jul 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.