Methods of selective atomic layer deposition

US12291779B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Bhaskar Jyoti Bhuyan · San Jose, US
• Mark Saly · Santa Clara, US
• David Thompson · San Jose, US
• Tobin Kaufman-Osborn · Sunnyvale, US
• Kurt Fredrickson · Sunnyvale, US
• Thomas Knisley · Monroe, US
• Liqi Wu · San Jose, US

Key dates

• Filing date: Oct 17, 2023
• Grant date: May 6, 2025
• Expiry date: Oct 17, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76849
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.