Method of uniformity control
US12300468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2022 |
| Grant date | May 13, 2025 |
| Priority date | — |
| Expiry date | Jun 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3343
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate including an underlying layer; maintaining a steady state flow of a process gas into the plasma processing chamber in the plasma processing chamber; generating a plasma in the plasma processing chamber; exposing the substrate to the plasma to etch the underlying layer; and pulsing a first additional gas, using a first effusive gas injector, towards a first region of the substrate to disrupt the steady state flow of the process gas over the first region, the pulsing locally changing a composition of the plasma near the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.