Patent · US Active

ESD protection decoupled from diffusion

US12328946B2 · kind B2 · utility

0Cited by

1References

17Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Urusa Alaan · Hillsboro, US
Abhishek A. Sharma · Hillsboro, US
Charles C. Kuo · Hillsboro, US
Benjamin Orr · Munich, DE
Nicholas A. Thomson · Hillsboro, US
Ayan Kar · Portland, US
Arnab Sen Gupta · Beaverton, US
Kaan Oguz · Beaverton, US
Brian S. Doyle · Portland, US
Prashant Majhi · San Jose, US
Van H. Le · Portland, US
Elijah V. Karpov · Portland, US

Key dates

Filing date	Dec 23, 2020
Grant date	Jun 10, 2025
Priority date	—
Expiry date	Sep 12, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/121
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Embodiments disclosed herein include semiconductor devices with electrostatic discharge (ESD) protection of the transistor devices. In an embodiment, a semiconductor device comprises a semiconductor substrate, where a transistor device is provided on the semiconductor substrate. In an embodiment, the semiconductor device further comprises a stack of routing layers over the semiconductor substrate, and a diode in the stack of routing layers. In an embodiment, the diode is configured to provide electrostatic discharge (ESD) protection to the transistor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.