Patent · US Active

Semiconductor processing chamber for improved precursor flow

US12340979B2 · kind B2 · utility

0Cited by
1,015References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 16, 2018
Grant dateJun 24, 2025
Priority date
Expiry dateMay 16, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32889
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.