Pressure control system for a multi-head processing chamber of a plasma processing apparatus
US12347661B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 26, 2021 |
| Grant date | Jul 1, 2025 |
| Priority date | — |
| Expiry date | May 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A pressure control system is provided. The pressure control system includes a member at least partially positioned within a pumping port fluidly coupled between a multi-head processing chamber and a pump configured to evacuate gases from the multi-head processing chamber. The member is rotatable relative to the pumping port. The pressure control system includes a plurality of pressure sensors. Each of the pressure sensors is configured to obtain data indicative of a pressure of a flow of gas entering the multi-head processing chamber at a corresponding head of the multi-head processing chamber. The pressure control system includes an actuator configured to rotate the member to control a pressure of a flow of gas at a first processing head of the multi-head processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.