Gap fill methods using catalyzed deposition
US12351909B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Mar 11, 2021 |
| Grant date | Jul 8, 2025 |
| Priority date | — |
| Expiry date | May 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.