One chamber multi-station selective metal removal
US12374568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2023 |
| Grant date | Jul 29, 2025 |
| Priority date | — |
| Expiry date | Apr 9, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first processing station, performing a gradient oxidation process on the wafer in the second processing station, performing a gradient etch process on the wafer in the third processing station, and performing the gradient etch process on the wafer in the fourth processing station, wherein the first, second, third, and fourth processing stations are located in an interior volume of a processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.