Metal oxide preclean for bottom-up gapfill in MEOL and BEOL
US12394619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2023 |
| Grant date | Aug 19, 2025 |
| Priority date | — |
| Expiry date | Dec 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl5, MoCl6) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.