Selective film formation using a self-assembled monolayer
US12406887B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 30, 2022 |
| Grant date | Sep 2, 2025 |
| Priority date | — |
| Expiry date | Feb 16, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.