RF pulsing within pulsing for semiconductor RF plasma processing
US12424410B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Jul 6, 2023 |
| Grant date | Sep 23, 2025 |
| Priority date | — |
| Expiry date | Nov 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K5/02
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.