Materials and methods for plasma etching of oxides and nitrides of silicon
US4376672A · kind A · utility
46Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1981 |
| Grant date | Mar 15, 1983 |
| Priority date | — |
| Expiry date | Oct 26, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/131
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching a layer of inorganic insulating material formed on a semiconductor wafer and containing silicon as the principal metallic element. The method involves disposing a wafer on one of a pair of electrode structures in a closed chamber. A reactive gas mixture comprising principally a fluorocarbon gas doped with a preselected quantity of carbon dioxide is supplied to the chamber. Radio frequency electrical energy is supplied to one of the electrode structures to create a plasma of the reactive gas mixture for chemically attacking the insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.