Materials and methods for plasma etching of aluminum and aluminum alloys
US4412885A · kind A · utility
36Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1982 |
| Grant date | Nov 1, 1983 |
| Priority date | — |
| Expiry date | Nov 3, 2002 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching a layer of aluminum or aluminum alloy on a semiconductor wafer using the steps: disposing the wafer on one of a pair of electrode structures in a closed chamber; communicating into the chamber a reactive gas mixture comprising a principal gas mixture of BCl.sub.3 and Cl.sub.2 and a dopant gas of oxygen and fluorocarbon gas; and supplying radio frequency electrical energy to one of the electrode structures to create a plasma of the reactive gas mixture for etching the aluminum layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.