Magnetron-enhanced plasma etching process
US4668338A · kind A · utility
79Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1985 |
| Grant date | May 26, 1987 |
| Priority date | — |
| Expiry date | Dec 30, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetically-enhanced, variable magnetic field, RIE mode plasma etch process for etching materials such as dielectrics and polycrystalline, is disclosed. The variable magnetic field permits optimization of selected characteristics such as etch rate, etch selectivity, ion bombardment and radiation damage, etch uniformity, and etch anisotropy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.