Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US4668365A · kind A · utility
175Cited by
8References
22Claims
0Family size
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Key dates
| Filing date | Oct 25, 1984 |
| Grant date | May 26, 1987 |
| Priority date | — |
| Expiry date | Oct 25, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3327
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.