Chemical vapor deposition system
US4828224A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1987 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Oct 15, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/139
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-system for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables. The processing sub-system is separated from the handling sub-system by a special isolation valve and a gas injection device is used to inject the gas into the reaction chamber with a predetermined velocity profile. A special temperature sensing arrangement is provided in the processing sub-system for controlling a radiant heating sub-system which is provided …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.