Semiconductor memory
US4901128A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1986 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | Nov 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor is formed by a plate which is made up of the side walls and base of a groove formed in a semiconductor substrate, and by a capacitor electrode formed on the side walls and the base, over an insulation film, and which is connected electrically to the source or drain of the insulated-gate field-effect transistor. Various embodiments are provided for reducing size and preventing leakage between other memory cells, including forming stacked capacitors, forming the transistor over the capacitor, using a silicon-over-insulator arrangement for the transistor, forming a common capacitor plate and providing high impurity layers within the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.