Semiconductor memory and method of producing the same
US4984038A · kind A · utility
9Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 1988 |
| Grant date | Jan 8, 1991 |
| Priority date | — |
| Expiry date | May 17, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/395
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.