Process for CVD deposition of tungsten layer on semiconductor wafer
US5028565A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1989 |
| Grant date | Jul 2, 1991 |
| Priority date | — |
| Expiry date | Aug 25, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvements comprise depositing tungsten on the semiconductor wafer in the presence of nitrogen gas to improve the reflectivity of the surface of the resulting layer of tungsten; maintaining the vacuum chamber at a pressure of from about 20 to 760 Torr to improve the deposition rate of the tungsten, as well as to improve the reflectivity of the tungsten surface; and, when needed, the additional step of forming a nucleation layer on the semiconductor layer prior to the step of depositing tungsten on the semiconductor wafer to improve the uniformity of the deposited tungsten layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.